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Advanced Technical Information
High Voltage, High Gain IXBH 16N170A VCES = 1700 V
TM
BIMOSFET Monolithic IXBT 16N170A IC25 = 16 A
Bipolar MOS Transistor VCE(sat) = 6.0 V
tfi(typ) = 50 ns
Symbol Test Conditions Maximum Ratings TO-268
(IXBT)
VCES TJ = 25