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2SD2114
SOT-23 Transistor(NPN)
1. BASE SOT-23
2.EMITTER
3.COLLECTOR
Features
High DC current gain. hFE = 1200 (Typ.)
High emitter-base voltage. VEBO =12V (Min.)
Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA)
MARKING: BBV,BBW
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 25 V
VCEO Collector-Emitter Voltage 20 V
VEBO Emitter-Base Voltage 12 V
IC Collector Current -Continuous 0.5 A
PC Collector Power Dissipation 0.25 W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10A, IE=0 25 V
Collector-emitter breakdown voltage V(BR)CEO IC =1mA, IB=0 20 V
Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 12 V
Collector cut-off current ICBO VCB=20 V, IE=0 0.5 A
Emitter cut-off current IEBO VEB=10V,IC=0 0.5 A
DC current gain hFE VCE=3V, IC=10mA 820 2700
Collector-emitter saturation voltage VCE(sat) IC= 500mA, IB=20 mA 0.4 V
VCE=10V, IC=50mA
Transition frequency fT 350 MHz
f=100MHz
output capacitance Cob VCB=10V,IE=0,f=1MHz 8 pF
Vin=0.1V(rms),IB=1mA,
On resistance R(on) 0.8
f=1KHZ
CLASSIFICATION OF hFE
Rank V W
Range 820-1800 1200-2700
2SD2114
SOT-23 Transistor(NPN)
Typical characteristics
2SD2114
SOT-23 Transistor(NPN)