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STD22NM20N
N-CHANNEL 200V - 0.088 - 22A DPAK
ULTRA LOW GATE CHARGE MDmeshTM II MOSFET
Table 1: General Features Figure 1: Package
TYPE VDSS RDS(on) ID
STD22NM20N 200 V < 0.105 22 A
WORLDWIDE LOWEST GATE CHARGE
TYPICAL RDS(on) = 0.088
HIGH dv/dt and AVALANCHE CAPABILITIES
LOW INPUT CAPACITANCE 3
LOW GATE RESISTANCE 1
DESCRIPTION DPAK
t( s)
uc
This 200V MOSFET with a new advanced layout
brings all unique advantages of MDmesh technol-
ogy to lower voltages. The device exhibits world-
d
wide lowest gate charge for any given on-
resistance. Its use is therefore ideal as primary
switch in isolated DC-DC converters for Telecom P ro
and Computer applications. Used in combination
with secondary-side low-voltage STripFETTM
products, it contributes to reducting losses and
te
Figure 2: Internal Schematic Diagram
le
boosting effeciency.
so
APPLICATIONS
- Ob
s)
The MDmeshTM family is very suitable for increas-
t(
ing power density allowing system miniaturization
and higher efficiencies
d uc
Pro
e
let
so
Table 2: Order Codes
Ob SALES TYPE
STD22NM20NT4
MARKING
D22NM20N
PACKAGE
DPAK
PACKAGING
TAPE & REEL
Rev. 5
November 2005 1/10
STD22NM20N
Table 3: Absolute Maximum ratings
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 200 V
VDGR Drain-gate Voltage (RGS = 20 k) 200 V
VGS Gate- source Voltage