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KTC3876
Plastic-Encapsulate Transistors
NPN Silicon
COLLECTOR
3
1
BASE
2
SOT-23
EMITTER
MAXIMUM RATINGS (Ta=25 C)
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 30 Vdc
Collector-Base Voltage VCBO 35 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current -Continuous IC 500 mAdc
THERMAL CHARACTERISTICS
Characteristics Symbol Value Unit
Total Device Dissipation TA =25 C PD 200 mW
Junction and Storage, Temperature TJ, Tstg -55 to +150 C
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC= 1 mA dc, IB=0) V(BR)CEO 30 - Vdc
Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) V(BR)CBO 35 - Vdc
Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) V(BR)EBO 5.0 - Vdc
Collector Cutoff Current (VCB= 35Vdc , IE=0) ICBO - 0.1 uAdc
Emitter Cutoff Current (VEB= 5.0 Vdc , IC =0) IEBO - 0.1 uAdc
WEITRON 1/3 30-Jul-2012
http://www.weitron.com.tw
KTC3876
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min TYP Max Unit
ON CHARACTERISTICS
DC Current Gain
hFE1 70 400
(IC= 100mAdc, VCE=1 Vdc )
(IC= 400mAdc, VCE= 6 Vdc ) hFE2 25
Y 40
Collector-Emitter Saturation Voltage
VCE(sat) 0.25 Vdc
(IC= 100 mAdc, IB= 10 mAdc)
Base-Emitter Voltage
VBE 1 Vdc
(VCE = 1V, IB= 100mAdc)
Transition Frequency
(IC= 20mAdc, VCE= 6 Vdc) fT 300 MHz
Collector Output Capacitance
Cob 7 pF
(VCB= 6 V, IE= 0, f=1MHz)
CLASSIFICATION OF hFE
Rank O Y GR(G)
Range 70-140 120-240 200-400
Marking WO WY WG
WEITRON 2/3 30-Jul-2012
http://www.weitron.com.tw
KTC3876
SOT-23 Package Outline Dimensions Unit:mm
A Dim Min Max
A 0.35 0.51
B 1.19 1.40
T OP V IE W B C C 2.10 3.00
D 0.85 1.05
E 0.46 1.00
D
G 1.70 2.10
G
E H 2.70 3.10
H J 0.01 0.13
K 0.89 1.10
K L 0.30 0.61
M 0.076 0.25
L
J M
WEITRON 3/3 30-Jul-2012
http://www.weitron.com.tw