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SEMICONDUCTOR KMB014P30QA
TECHNICAL DATA P-Ch Trench MOSFET
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low
on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly
suitable for Battery pack. H
T
D P G L
FEATURES
VDSS=-30V, ID=-14A. A
DIM MILLIMETERS
Drain-Source ON Resistance. A _
4.85 + 0.2
B1 _
3.94 + 0.2
RDS(ON)=12m (Max.) @ VGS=-10V B2 _
8 5 6.02 + 0.3
RDS(ON)=18m (Max.) @ VGS=-4.5V D _
0.4 + 0.1
B1 B2 G 0.15+0.1/-0.05
Super High Dense Cell Design H _
1.63 + 0.2
1 4 L _
0.65 + 0.2
P 1.27
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) T 0.20+0.1/-0.05
CHARACTERISTIC SYMBOL PATING UNIT
Drain Source Voltage VDSS -30 V
Gate Source Voltage VGSS 20 V
DC ID* -14 A FLP-8
Drain Current
Pulsed IDP -70 A
Drain Source Diode Forward Current IS -1.7 A
Drain Power Dissipation P D* 2.5 W
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55~150
Thermal Resistance, Junction to Ambient RthJA* 50 /W KMB014P
30QA
Note : *Surface Mounted on FR4 Board 706
PIN CONNECTION (TOP VIEW)
S 1 8 D 1 8
2 7
S 2 7 D
3 6
S 3 6 D
4 5
G 4 5 D
2007. 6. 29 Revision No : 1 1/4
KMB014P30QA
ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS IDS=-250 A, VGS=0V -30 - - V
Drain Cut-off Current IDSS VDS=-24V, VGS=0V - - -1 A
Gate Leakage Current IGSS VGS= 25V, VDS=0V - - 100 nA
Gate Threshold Voltage Vth VDS=VGS, ID=-250 A -1.4 -1.9 -2.6 V
VGS=-10V, ID=-12A - 8.5 12.0
Drain-Source ON Resistance RDS(ON)* m
VGS=-4.5V, ID=-10A - 12 18
On-State Drain Current ID(ON)* VDS=-5V, VGS=-10V -50 - - A
Forward Transconductance Gfs* VDS=-5V, ID=-10A - 14 - S
Dynamic
Input Capaclitance Ciss - 3625 -
Ouput Capacitance Coss VDS=15V, VGS=0V, f=1MHz - 980 - pF
Reverse Transfer Capacitance Crss - 705 -
VDS=-15V, VGS=-10V, ID=-12A - 65.5 -
Total Gate Charge Qg*
VDS=-15V, VGS=-4.5V, ID=-12A - 32.6 -
nC
Gate-Source Charge Qgs* - 10.9 -
VDS=-15V, VGS=-10V, ID=-12A
Gate-Drain Charge Qgd* - 17.5 -
Turn-On Delay Time td(on)* - 48.5 -
Turn-On Rise Time tr* VDD=-15V, VGS=-10V - 20.3 -
ns
Turn-Off Delay Time td(off)* RL=12A, RG=3 - 110.8 -
Turn-Off Fall Time tf* - 52.8 -
Source-Drain Diode Ratings
Source-Drain Forward Voltage VSDF* VGS=0V, IDR=-1.7A, - -0.73 -1.2 V
Note
1. Pulse Test : Pulse width 10 , Duty cycle 1%
2007. 6. 29 Revision No : 1 2/2
KMB014P30QA
Fig 1. ID - VDS Fig 2. ID - VGS
25 25
-VGS=3.5V
20 -VGS=4V
20
Drain Current ID (A)
Drain Current ID (A)
-VGS=4.5V 125 C
25 C
15 -VGS=10V 15
-55 C
10 10
-VGS=3V
5 5
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.6 1.2 1.8 2.4 3.0 3.6
Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)
Fig 3. C - VDS Fig 4. RDS(ON) - Tj
6000 1.8
VGS =-10V
ID= -12A
Normalized On Resistance
5000 1.6
Ciss
Capacitance (pF)
4000 1.4
3000 1.2
2000 Coss 1.0
1000 0.8
Crss
0 0.6
0 5 10 15 20 25 30 -55 -25 0 25 50 75 100 125
Drain - Source Voltage VDS (V) Junction Temperature Tj ( C)
Fig 5. Vth - Tj Fig 6. IDR - VSD
Reverse Source-Drain Current IDR (A)
1.3
Normalized Threshold Voltage Vth
VDS = VGS
20
VGS = 0V
IDS = 250