Text preview for : 2n2609.pdf part of Microsemi 2n2609 . Electronic Components Datasheets Active components Transistors Microsemi 2n2609.pdf



Back to : 2n2609.pdf | Home

TECHNICAL DATA

P-CHANNEL J-FET
Qualified per MIL-PRF-19500/296

Devices Qualified Level


2N2609 JAN




ABSOLUTE MAXIMUM RATINGS (TA = +250C unless otherwise noted)
Parameters / Test Conditions Symbol Value Units
Gate-Source Voltage VGSS 30 V
Power Dissipation (1) TA = +250C PD 300 mW
0
Operating Junction & Storage Temperature Range Top, Tstg -65 to +200 C
(1) Derate linearly 1.71 mW/0C for TA > +250C.
TO-18
(TO-206AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted)
PARAMETERS / TEST CONDITIONS Symbol Min. Max. Units
Gate-Source Breakdown Voltage
VDS = 0, IG = 1.0