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BUT32V
NPN TRANSISTOR POWER MODULE
s HIGH CURRENT POWER BIPOLAR MODULE
s VERY LOW Rth JUNCTION CASE
s SPECIFIED ACCIDENTAL OVERLOAD
AREAS
s ISOLATED CASE (2500V RMS)
s EASY TO MOUNT
s LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIAL APPLICATIONS:
s MOTOR CONTROL
Pin 4 not connected
s SMPS & UPS
s DC/DC & DC/AC CONVERTERS
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCEV Collector-Emitter Voltage (VBE = -5 V) 400 V
VCEO(sus) Collector-Emitter Voltage (IB = 0) 300 V
VEBO Emitter-Base Voltage (I C = 0) 7 V
IC Collector Current 80 A
ICM Collector Peak Current (t p = 10 ms) 120 A
IB Base Current 16 A
I BM Base Peak Current (t p = 10 ms) 24 A
Pt ot Tot al Dissipation at T c = 25 o C 250 W
o
T stg Storage Temperature -55 to 150 C
o
Tj Max. Ope rating Junction Temperature 150 C
o
VI SO Insulation Withstand Voltage (AC-RMS) 2500 C
September 1997 1/7
BUT32V
THERMAL DATA
o
R thj-ca se Thermal Resistance Junction-case Max 0.5 C/W
R t hc-h Thermal Resistance Case-heatsink With Conductive
o
Grease Applied Max 0.05 C/W
o
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CER Collecto r Cut-of f VCE = VCEV 1 mA
Current (RBE = 5 ) VCE = VCEV T j = 100 o C 5 mA
ICEV Collecto r Cut-of f VCE = VCEV 1 mA
Current (VBE = -5) VCE = VCEV T j = 100 o C 4 mA
I EBO Emitter Cut-off Current VEB = 5 V 1 mA
(I C = 0)
VCEO(SUS) * Collecto r-Emitter I C = 0.2 A L = 25 mH 300 V
Sustaining Voltage Vc lamp = 300 V
hFE DC Current Gain I C = 40 A VCE = 5 V 16
V CE(sat ) Collecto r-Emitter I C = 40 A IB = 4 A 0.6 0. 9 V
Saturation Voltage I C = 40 A IB = 4 A T j = 100 o C 1.2 1. 9 V
VBE( sat) Base-Emitter I C = 40 A IB = 4 A 1.12 1. 3 V
Saturation Voltage I C = 40 A IB = 4 A T j = 100 o C 1.1 1. 3 V
diC /dt Rate of Rise of VCC = 300 V RC = 0 tp = 3