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STP4N100
STP4N100FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR

TYPE VDSS R DS(on) ID
STP4N100 1000 V < 3.5 4A
STP4N100FI 1000 V < 3.5 2.2 A

s TYPICAL RDS(on) = 3.1
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
3 3
s LOW INPUT CAPACITANCE 2 2
1 1
s LOW GATE CHARGE
s APPLICATION ORIENTED
CHARACTERIZATION TO-220 ISOWATT220
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s CONSUMER AND INDUSTRIAL LIGHTING
s DC-AC INVERTERS FOR WELDING INTERNAL SCHEMATIC DIAGRAM
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLY (UPS)

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
STP4N100 STP4N100FI
V DS Drain-source Voltage (V GS = 0) 1000 V
V DGR Drain- gate Voltage (R GS = 20 k) 1000 V
V GS Gate-source Voltage