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SSG4392N
2.9A, 150V, RDS(ON) 255 m
Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET

RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free


SOP-8
DESCRIPTION
These miniature surface mount MOSFETs B
utilize a high cell density trench process to provide
low RDS(on) and to ensure minimal power loss and
heat dissipation.
L D

M

FEATURES
A C
Low RDS(on) provides higher efficiency and N
extends battery life. J K

Low thermal impedance copper leadframe
H G F E
SOP-8 saves board space.
Fast switching speed. Millimeter Millimeter
REF. REF.
High performance trench technology. A
Min.
5.80
Max.
6.20 H
Min.
0.35
Max.
0.49
B 4.80 5.00 J 0.375 REF.
C 3.80 4.00 K 45