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DISCRETE SEMICONDUCTORS
DATA SHEET
BF1109; BF1109R; BF1109WR
N-channel dual-gate MOS-FETs
Product specification 1997 Dec 08
Supersedes data of 1997 Sep 03
NXP Semiconductors Product specification
BF1109; BF1109R;
N-channel dual-gate MOS-FETs
BF1109WR
FEATURES PINNING
Short channel transistor with high PIN DESCRIPTION 3
handbook, 2 columns 4
forward transfer admittance to input
1 source
capacitance ratio
2 drain
Low noise gain controlled amplifier
up to 1 GHz 3 gate 2 2 1
Internal self-biasing circuit to 4 gate 1
Top view MSB035
ensure good cross-modulation
performance during AGC and good
DC stabilization. BF1109R marking code: NBp.
APPLICATIONS Fig.2 Simplified outline
(SOT143R).
VHF and UHF applications with 9 V
supply voltage, such as television
tuners and professional
communications equipment.
4
handbook, 2 columns 3 ok, halfpage 3 4
DESCRIPTION
Enhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated 1 2
2 1
diodes between gates and source Top view MSB014 Top view MSB842
protect against excessive input
voltage surges. The BF1109, BF1109 marking code: NFp. BF1109WR marking code: NB.
BF1109R and BF1109WR are
encapsulated in the SOT143B, Fig.1 Simplified outline Fig.3 Simplified outline
SOT143R and SOT343R plastic (SOT143B). (SOT343R).
packages respectively.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VDS drain-source voltage 11 V
ID drain current (DC) 30 mA
Ptot total power dissipation Tamb 80 C 200 mW
yfs forward transfer admittance 30 mS
Cig1-ss input capacitance at gate 1 2.2 2.7 pF
Crss reverse transfer capacitance f = 1 MHz 25 40 fF
F noise figure f = 800 MHz 1.5 2.5 dB
Xmod cross-modulation input level for k = 1% at 40 dB AGC 100 dBV
Tj operating junction temperature 150 C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
1997 Dec 08 2
NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 11 V
ID drain current (DC) 30 mA
IG1 gate 1 current 10 mA
IG2 gate 2 current 10 mA
Ptot total power dissipation Tamb 80 C; note 1 200 mW
Tstg storage temperature 65 +150 C
Tj operating junction temperature +150 C
Note
1. Device mounted on a printed-circuit board.
MGM243
250
handbook, halfpage
Ptot
(mW)
200
150
100
50
0
0 40 80 120 160
Tamb (