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Si9410DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)
0.030 @ VGS = 10 V 7.0
30 0.040 @ VGS = 5 V 6.0
0.050 @ VGS = 4.5 V 5.4
D D D D
SO-8
N/C 1 8 D
S 2 7 D
G
S 3 6 D
G 4 5 D
Top View
S S
Ordering Information: Si9410DY
Si9410DY-T1 (with Tape and Reel) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS "20
TA = 25_C 7.0
Continuous Drain Current (TJ = 150_C)a ID
TA = 70_C 5.8
A
Pulsed Drain Current IDM 30
Continuous Source Current (Diode Conduction)a IS 2.8
TA = 25_C 2.5
Maximum Power Dissipationa PD W
TA = 70_C 1.6
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambienta RthJA 50 _C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70122 www.vishay.com
S-31060--Rev. M, 26-May-03 1
Si9410DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = 24 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS mA
VDS = 24 V, VGS = 0 V, TJ = 55_C 25
On-State Drain Currentb ID(on) VDS w 5 V, VGS = 10 V 30 A
VGS = 10 V, ID =7.0 A 0.024 0.030
Drain-Source On-State Resistanceb rDS(on) VGS = 5 V, ID = 4.0 A 0.030 0.040 W
VGS = 4.5 V, ID = 3.5 A 0.032 0.050
Forward Transconductanceb gfs VDS = 15 V, ID = 7.0 A 15 S
Diode Forward Voltageb VSD IS = 2 A, VGS = 0 V 0.72 1.1 V
Dynamica
Total Gate Charge Qg 24 50
Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 7 A 2.8 nC
Gate-Drain Charge Qgd 4.6
Turn-On Delay Time td(on) 14 30
Rise Time tr 10 60
VDD = 25 V, RL = 25 W
Turn-Off Delay Time td(off) ID ^ 1 A, VGEN = 10 V, RG = 6 W 46 150 ns
Fall Time tf 17 140
Source-Drain Reverse Recovery Time trr IF = 2 A, di/dt = 100 A/ms 60
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
www.vishay.com Document Number: 70122
2 S-31060--Rev. M, 26-May-03
Si9410DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
30 30
VGS = 10, 9, 8, 7, 6, 5 V
25 25
4V
I D - Drain Current (A)
I D - Drain Current (A)
20 20
15 15
10 3V 10 TC = 125_C
5 5 25_C
2V - 55_C
0 0
0 2 4 6 8 10 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.06 2400
0.05 2000
r DS(on) - On-Resistance ( W )
C - Capacitance (pF)
0.04 1600
VGS = 4.5 V
Ciss
0.03 1200
0.02 10 V 800
Coss
0.01 400 Crss
0.00 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 2.0
VDS = 15 V VGS = 10 V
ID = 7 A ID = 7 A
V GS - Gate-to-Source Voltage (V)
8 1.6
r DS(on) - On-Resistance ( W )
(Normalized)
6 1.2
4 0.8
2 0.4
0 0.0
0 5 10 15 20 25 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
Document Number: 70122 www.vishay.com
S-31060--Rev. M, 26-May-03 3
Si9410DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
30 0.30
0.25
r DS(on) - On-Resistance ( W )
TJ = 150_C ID = 3.2 A
I S - Source Current (A)
10 0.20
0.15
25_C
0.10
0.05
1 0.00
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 70
ID = 250 mA
60
50
V GS(th) Variance (V)
0.0
Power (W)
40
30
- 0.4
20
10
- 0.8 0
- 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 30
TJ - Temperature (_C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 50_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 30
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 70122
4 S-31060--Rev. M, 26-May-03
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Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1