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MMBT3906W
General Purpose Transistor COLLECTOR
3
PNP Silicon 1
3
BASE
1
2
2
EMITTER
SOT-323(SC-70)
M aximum R atings
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO -40 Vdc
Collector-Base Voltage VCBO -40 Vdc
Emitter-Base VOltage VEBO -5.0 Vdc
Collector Current-Continuous IC -200 mAdc
Thermal Characteristics
Characteristics Symbol Max Unit
Total Device Dissipation PD 150 mW
TA=25 C
Thermal Resistance, Junction to Ambient R qJA 833 C/W
Junction and Storage, Temperature TJ,Tstg -55 to +150 C
Device Marking
MMBT3906W=2A
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics Symbol Min Max Unit
Off Characteristics
Collector-Emitter Breakdown Voltage(2) (IC=-1.0mAdc.IB=0) V(BR)CEO -40 - Vdc
Collector-Base Breakdown Voltage (IC=-10