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CET9435A
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -5.3A, RDS(ON) = 60m @VGS = -10V.
RDS(ON) = 120m @VGS = -4.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
D
Lead free product is acquired.
SOT-223 package.
G
D S
D
G
SOT-223
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS