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BC807-16/ BC807-25
BC807-40

General Purpose Transistor COLLECTOR
3 MARKING DIAGRAM

PNP Silicon 1
3

BASE
1
2
2 SOT-23
EMITTER


Maximum Ratings ( TA=25 C unless otherwise noted)
Rating Symbol Value Unit
Collector-Emitter Voltage V CEO -45 V
Collector-Base Voltage VCBO -50 V
Emitter-Base VOltage VEBO -5.0 V
Collector Current-Continuous IC 500 mAdc



Thermal Characteristics
Characteristics Symbol Max Unit
Total Device Dissipation FR-5 Board (1) PD
(Note 1.)TA=25 C 225 mW
Derate above 25 C 1.8 mW/ C
Thermal Resistance, Junction to Ambient R qJA 556 C/W
Total Device Dissipation Alumina
Substrate, (Note 2.) TA=25 C PD 300 mW
Derate above 25 C 2.4 mW/ C
Thermal Resistance, Junction to Ambient R qJA 417 C/W
Junction and Storage, Temperature TJ,Tstg -55 to +150 C


Device Marking
BC807-17=5A1 , BC807-25=5B1 , BC807-40=5C1

1.F R -5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.




WEITRON Rev.A 16-Dec-08
http://www.weitron.com.tw
BC807-16/BC807-25
BC807-40 WE IT R ON
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics Symbol Min Typ Max Unit


Off Characteristics
Collector-Emitter Breakdown Voltage V(BR)CEO -45 - - V
(IC= -10mA)
Collector-Emitter Breakdown Voltage V
(IC=-10