2sb1375.pdf part of LGE 2sb1375 2sb1375.pdf, . Electronic Components Datasheets Active components Transistors LGE 2sb1375.pdf text manual preview

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2SB1375(PNP)
TO-220 Transistor
TO-220
1. BASE

2. COLLECTOR

3. EMITTER
3
2
1
Features
High Power Dissipation: PC=25W(TC=25)
Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A)
Collector metal(Fin)is Coverd with Mold Regin
Complementary to 2SD2012

MAXIMUM RATINGS (TA=25 unless otherwise noted ) Dimensions in inches and (millimeters)

Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -7 V
IC Collector Current -Continuous -3 A
PC Collector Dissipation 2 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-100