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2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
Rev. 01 -- 11 September 2009 Product data sheet

1. Product profile

1.1 General description
ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a
small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.

1.2 Features
I Logic-level compatible
I Very fast switching
I Trench MOSFET technology
I ESD protection up to 3 kV

1.3 Applications
I Relay driver
I High-speed line driver
I Low-side loadswitch
I Switching circuits

1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage - - 60 V
ID drain current - - 300 mA
IDM peak drain current single pulse; - - 1.2 A
tp 10