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SGM2310A
5 A, 60 V, RDS(ON) 115 m
Elektronische Bauelemente N-Channel Enhancement Mode Power MOSFET

RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
SOT-89

DESCRIPTION A
The SGM2310A utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient Top View CB 4

and cost-effectiveness device. The SGM2310A is universally
used for all commercial-industrial applications. K L
1
2
3

E

D
FEATURES F G H J
Simple drive requirement
Millimeter Millimeter
Super high density cell design for extremely low RDS(ON) REF.
Min. Max.
REF.
Min. Max.
A 4.40 4.60 G - -
B 4.05 4.25 H 0.89 1.20
C 2.40 2.60 J 0.35 0.41
D 1.40 1.60 K 0.70 0.80
E 3.00 REF. L 1.50 REF.
D
24
F 0.40 0.52
MARKING

1
2310A G
= Date code
3
S
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS