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2SC4617
SOT-523 Transistor(NPN)
SOT-523
1. BASE
2. EMITTER
3. COLLECTOR
Features
Low Cob:Cob=2.0pF(Typ)
Complement to 2SA1774
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current -Continuous 150 mA
PC Collector Power Dissipation 150 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=50uA, IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 50 V
Emitter-base breakdown voltage V(BR)EBO IE=50uA, IC=0 7 V
Collector cut-off current ICBO VCB=60V, IE=0 0.1 A
Emitter cut-off current IEBO VEB=7V, IE=0 0.1 A
DC current gain hFE VCE=6V, IC=1mA 120 560
Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 0.4 V
Transition frequency fT VCE=12V, IC=2mA, f=100MHz 180 MHz
Collector output capacitance Cob VCB=12V, IE=0, f=1MHz 3.5 pF
CLASSIFICATION OF hFE
Rank Q R S
Range 120-270 180-390 270-560
Marking BQ BR BS
2SC4617
SOT-523 Transistor(NPN)
Typical characteristics