stb60n03l-10.pdf part of ST stb60n03l-10 stb60n03l-10.pdf, . Electronic Components Datasheets Active components Transistors ST stb60n03l-10.pdf text manual preview

Text preview for : stb60n03l-10.pdf part of ST stb60n03l-10 . Electronic Components Datasheets Active components Transistors ST stb60n03l-10.pdf

Back to : stb60n03l-10.pdf | Home

STB60N03L-10
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
PRELIMIRARY DATA
TYPE V DSS R DS(on) ID
STB60N03L-10 30 V < 0.01 60 A

s TYPICAL RDS(on) = 0.0085
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
3 3
s 175 oC OPERATING TEMPERATURE 12 1
s APPLICATION ORIENTED
CHARACTERIZATION
I2PAK D2PAK
s THROUGH-HOLE I2PAK (TO-262) POWER
TO-262 TO-263
PACKAGE IN TUBE (SUFFIX "-1")
s SURFACE-MOUNTING D2PACK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX "T4")

APPLICATIONS INTERNAL SCHEMATIC DIAGRAM
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS

s REGULATORS

s DC-DC & DC-AC CONVERTERS

s AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
V DS Drain-source Voltage (V GS = 0) 30 V
VDGR Drain- gate Voltage (R GS = 20 k) 30 V
V GS Gate-source Voltage