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STD123S
SOT-23 Transistor(NPN)

SOT-23
1. BASE

2. EMITTER

3. COLLECTOR

Features
Low saturation medium current application
Extremely low collector saturation voltage
Suitable for low voltage large current drivers
High DC current gain and large current capability
Low on resistance : RON=0.6(Max.) (IB=1mA)

Marking:123
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol Parameter Value Units
VCBO Collector-Base Voltage 20 V
VCEO Collector-Emitter Voltage 15 V
VEBO Emitter-Base Voltage 6.5 V
IC Collector Current -Continuous 1 A
PC Collector Power Dissipation 350 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V (BR) CBO IC=50A, IE=0 20 V

Collector-emitter breakdown voltage V (BR) CEO IC =1mA, IB=0 15 V

Emitter-base breakdown voltage V (BR) EBO IE= 50A, IC=0 6.5 V

Collector cut-off current ICBO VCB= 20 V, IE=0 0.1 A

Emitter cut-off current IEBO VEB= 6V, IC=0 0.1 A

DC current gain hFE VCE=1V, IC= 100mA 150

Collector-emitter saturation voltage VCE (sat) IC=500mA, IB= 50mA 0.3 V

Transition frequency fT VCE=5V, IC=50mA 260 MHz

Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 5 pF

f=1KHz,IB=1mA,
On resistance RON 0.6
VIN=0.3V
STD123S
SOT-23 Transistor(NPN)

Typical characteristics