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Advance Technical Information

GigaMOSTM IXFK160N30T VDSS = 300V
Power MOSFET IXFX160N30T ID25 = 160A
RDS(on) 19m
N-Channel Enhancement Mode
trr 200ns
Avalanche Rated
Fast Intrinsic Diode
TO-264 (IXFK)

Symbol Test Conditions Maximum Ratings
VDSS TJ = 25