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DISCRETE SEMICONDUCTORS

DATA SHEET

BSP206
P-channel enhancement mode
vertical D-MOS transistor
Product specification April 1995
File under Discrete Semiconductors, SC13B
Philips Semiconductors Product specification

P-channel enhancement mode vertical
BSP206
D-MOS transistor

DESCRIPTION QUICK REFERENCE DATA
P-channel enhancement mode Drain-source voltage -VDS max. 60 V
vertical D-MOS transistor in a Drain current (DC) -ID max. 350 mA
miniature SOT223 envelope and
Drain-source ON-resistance
intended for use in relay, high-speed RDS(on) max. 6
-ID = 200 mA; -VGS = 10 V
and line-transformer drivers.
Gate threshold voltage -VGS(th) max. 3.5 V

FEATURES
PINNING - SOT223