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SEMICONDUCTOR MJD112/L
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
A I
FEATURES C J
DIM MILLIMETERS
High DC Current Gain.
D
A _
6.60 + 0.2
B _
6.10 + 0.2
: hFE=1000(Min.), VCE=4V, IC=1A. C _
5.0 + 0.2
D _ 0.2
1.10 +
B
Low Collector-Emitter Saturation Voltage. E _
2.70 + 0.2
F _
2.30 + 0.1
Straight Lead (IPAK, "L" Suffix) H 1.00 MAX
M
Q
K
_
E
I 2.30 + 0.2
Complementary to MJD117/L.
O
J _
0.5 + 0.1
H P K _
2.00 + 0.20
L _
0.50 + 0.10
F F L _
M 0.91+ 0.10
MAXIMUM RATING (Ta=25 ) 1 2 3
O _
0.90 + 0.1
P _
1.00 + 0.10
CHARACTERISTIC SYMBOL RATING UNIT Q 0.95 MAX
1. BASE
Collector-Base Voltage VCBO 100 V 2. COLLECTOR
3. EMITTER
Collector-Emitter Voltage VCEO 100 V
Emitter-Base Voltage VEBO 5 V
DC 2 DPAK
Collector Current IC A
Pulse 4
Base Current DC IB 50 mA
A I
C
Collector Power Ta=25 1.0 J
PC W
D
Dissipation Tc=25 20
DIM MILLIMETERS
B
Junction Temperature Tj 150 A _
6.60 + 0.2
_
B 6.10 + 0.2
_ 0.2
5.0 +
Q
C
K
Storage Temperature Range Tstg -55 150 D _
1.10 + 0.2
H P
E _
9.50 + 0.6
G _
E F 2.30 + 0.1
G _
0.76 + 0.1
H 1.0 MAX
I _
2.30 + 0.2
C J _
0.5 + 0.1
F F L _ 0.2
K 2.0 +
L _
0.50 + 0.1
B P _
1.0 + 0.1
1 2 3 Q 0.90 MAX
1. BASE
R1 R2 2. COLLECTOR
3. EMITTER
= 10k = 0.6k
E
IPAK
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Sustaining Voltage VCEO(SUS) IC=30mA, IB=0 100 - - V
ICEO VCE=50V, IB=0 - - 20
Collector Cut-off Current A
ICBO VCB=100V, IE=0 - - 20
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 2 mA
VCE=3V, IC=0.5A 500 - -
DC Current Gain hFE
VCE=3V, IC=2A 1,000 12,000 -
Collector-Emitter Saturation Voltage VCE(sat) IC=2A, IB=8mA - - 2.0 V
Base-Emitter On Voltage VBE(ON) VCE=3V, IC=2A - - 2.8 V
Current Gain Bandwidth Product fT VCE=10V, IC=0.75A, f=1MHz 25 - - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=0.1MHz - - 100 pF
2003. 3. 27 Revision No : 4 1/2
MJD112/L
h FE - I C V CE(sat) ,V BE(sat) - I C
10k 10
VCE =3V I C /I B =250
5k 5
SATURATION VOLTAGE
DC CURRENT GAIN h FE
VCE(sat) , VBE(sat) (V)
3k 3
VBE(sat)
1k 1
VCE(sat)
500 0.5
300 0.3
100 0.1
0.01 0.03 0.1 0.3 1 3 5 0.01 0.03 0.1 0.3 1 3 5
COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)
C ob - V CB P C - Ta
200 25
1 Tc=25 C
POWER DISSIPATION PC (W)
f=0.1MHz
2 Ta=25 C
CAPACITANCE C ob (pF)
1
100 20
15
50
30 10
5
2
10 0
1 3 5 10 30 50 0 50 100 150 200
COLLECTOR-BASE VOLTAGE V CB (V) CASE TEMPERATURE Ta ( C)
SAFE OPERATING AREA
10
5 I C MAX.(PULSED) *
10
I C MAX. 0