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Preliminary Technical Information

TrenchMVTM IXTC160N10T VDSS = 100 V
Power MOSFET ID25 = 83 A
(Electrically Isolated Back Surface) RDS(on) 7.5 m
N-Channel Enhancement Mode
Avalanche Rated

Symbol Test Conditions Maximum Ratings ISOPLUS220 (IXTC)
E153432
V DSS TJ = 25