Text preview for : si3443dv.pdf part of Vishay si3443dv . Electronic Components Datasheets Active components Transistors Vishay si3443dv.pdf
Back to : si3443dv.pdf | Home
Si3443DV
Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY FEATURES
VDS (V) rDS(on) (W) ID (A) D TrenchFETr Power MOSFET
D 100% Rg Tested
0.065 @ VGS = -4.5 V -4.5
-20 0.090 @ VGS = -2.7 V -3.8
0.100 @ VGS = -2.5 V -3.7
TSOP-6 (4) S
Top View
1 6
3 mm 5 (3) G
2
3 4
2.85 mm
(1, 2, 5, 6) D
Ordering Information: Si3443DV-T1--E3 (Lead Free) P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS -20
V
Gate-Source Voltage VGS "12
TA = 25_C -4.5 -3.4
Continuous Drain Current (TJ = 150_C)a ID
TA = 70_C -3.6 -2.7
A
Pulsed Drain Current IDM -20
continuous Source Current (Diode Conduction)a IS -1.7 -0.9
TA = 25_C 2.0 1.1
Maximum Power Dissipationa PD W
TA = 70_C 1.3 0.7
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t v 5 sec 50 62.5
Junction-to-Ambienta
Maximum J
M i ti t A bi t RthJA
Steady State 90 110 C/W
_C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 22 30
Notes
a. Surface Mounted on FR4 Board, t v 5 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 71741 www.vishay.com
S-32559--Rev. E, 29-Dec-03 1
Si3443DV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250 mA -0.6 -1.4 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V "100 nA
VDS = -20 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS mA
VDS = -20 V, VGS = 0 V, TJ = 70_C -5
On-State Drain Currenta ID(on) VDS = -5 V, VGS = -4.5 V -15 A
VGS = -4.5 V, ID = -4.5 A 0.050 0.065
Drain-Source On-State Resistancea rDS(on) VGS = -2.7 V, ID = -3.8 A 0.070 0.090 W
VGS = -2.5 V, ID = -3.7 A 0.080 0.100
Forward Transconductancea gfs VDS = -10 V, ID = -4.5 A 10 S
Diode Forward Voltagea VSD IS = -1.7 A, VGS = 0 V -0.8 -1.2 V
Dynamicb
Total Gate Charge Qg 7.3 15
Gate-Source Charge Qgs VDS = -10 V, VGS = -4.5 V, ID = -4.5 A 2.0 nC
Gate-Drain Charge Qgd 1.9
Gate Resistance Rg 3 15 W
Turn-On Delay Time td(on) 15 50
Rise Time tr 32 60
VDD = -10 V, RL = 10 W
Turn-Off Delay Time td(off) ID ^ -1.0 A, VGEN = -4.5 V, Rg = 6 W 50 100 ns
Fall Time tf 45 80
Source-Drain Reverse Recovery Time trr IF = -1.7 A, di/dt = 100 A/ms 35 80
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
20 20
VGS = 5 thru 3.5 V 3V TC = -55_C
16 16 25_C
I D - Drain Current (A)
I D - Drain Current (A)
2.5 V 125_C
12 12
8 8
2V
4 4
1.5 V
0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71741
2 S-32559--Rev. E, 29-Dec-03
Si3443DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current Capacitance
0.20 1200
r DS(on) - On-Resistance ( W )
1000
0.16 Ciss
C - Capacitance (pF)
VGS = 2.7 V 800
0.12
600
VGS = 2.5 V
0.08
VGS = 4.5 V 400
Coss
0.04
200
Crss
0.00 0
0 4 8 12 16 20 0 4 8 12 16 20
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
5 1.6
VDS = 10 V VGS = 4.5 V
V GS - Gate-to-Source Voltage (V)
ID = 4.5 A ID = 4.5 A
r DS(on) - On-Resistance (W)
4 1.4
(Normalized)
3 1.2
2 1.0
1 0.8
0 0.6
0 2 4 6 8 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
20 0.20
0.16
r DS(on) - On-Resistance ( W )
I S - Source Current (A)
10 TJ = 150_C ID = 4.5 A
0.12
0.08
TJ = 25_C
0.04
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 71741 www.vishay.com
S-32559--Rev. E, 29-Dec-03 3
Si3443DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.4
25
0.3
20
0.2
VGS(th) Variance (V)
ID = 250 mA
15
Power (W)
0.1
10
0.0
5
-0.1
-0.2
0
-50 -25 0 25 50 75 100 125 150
10-2 10-1 1 10 100 600
TJ - Temperature (_C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 90_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71741
4 S-32559--Rev. E, 29-Dec-03
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1