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2SB1370(PNP)
TO-220F Bipolar Transistors
TO-220F
1. BASE
2. COLLECTOR
3. EMITTE
1 2 3
Features
Breakdown Voltage High
Reverse Cut-off Current Small
Saturation Voltage Low
Collector Power dissipation
PCM : 2 W (Tamb=25)
30 W (Tcase=25)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -3 A
TJ Junction temperature 150
Tstg Storage temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-50A, IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -60 V
Emitter-base breakdown voltage V(BR)EBO IE=-50A, IC=0 -5 V
Collector cut-off current ICBO VCB=-60V, IE=0 -10 A
Emitter cut-off current IEBO VEB=-4V, IC=0 -10 A
DC current gain hFE * VCE=-5V, IC=-500mA 100 320
Collector-emitter saturation voltage VCE(sat) * IC=-2A, IB=-0.2A -1.5 V
Base-emitter saturation voltage VBE(sat) * IC=-2A, IB=-0.2A -1.5 V
Transition frequency fT VCE=-5V, IC=-500mA,f=5MHz 15 MHz
Out capacitance Cob VCB= -10 V ,f=1MHZ 80 pF
*Pulse test: tp300S, 0.02.
CLASSIFICATION OF hFE
Rank E F
Range 100-200 160-320
2SB1370(PNP)
TO-220F Bipolar Transistors
Typical Characteristics