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KTC3265
TRANSISTOR (NPN) SOT-23
FEATURES
1. BASE
2. EMITTER
High DC current gain
3. COLLECTOR
Complementary to KTA1298
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 35 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 800 mA
PC Collector Power Dissipation 200 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 35 V
Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=30 V, IE=0 0.1 A
Collector cut-off current IEBO VEB=5 V, IC=0 0.1 A
DC current gain hFE VCE=1V, IC= 100mA 100 320
Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=20mA 0.5 V
base-emitter voltage V BE VCE=1V,IC=10mA 0.5 0.8 V
VCE=5V, IC=10mA
Transition frequency fT 120 MHz
f=100MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHZ 13 pF
CLASSIFICATION OF hFE
Rank O Y
Range 100-200 160-320
Marking EO EY
1
JinYu www.htsemi.com
semiconductor
Date:2011/05
KTC3265
Typical Characteristics
2
JinYu www.htsemi.com
semiconductor
Date:2011/05