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CEM3254
N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY

FEATURES

30V ,7.8A, RDS(ON) = 28m @VGS = 10V.
RDS(ON) = 40m @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). D D D D
8 7 6 5
High power and current handing capability.
Lead-free plating ; RoHS compliant.
Surface mount Package.

1 2 3 4
S S S G

SO-8
1

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS