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PMBT3946YPN
40 V, 200 mA NPN/PNP general-purpose double transistor
Rev. 01 -- 12 May 2009 Product data sheet




1. Product profile

1.1 General description
NPN/PNP general-purpose double transistor in a SOT363 (SC-88) very small
Surface-Mounted Device (SMD) plastic package.

Table 1. Product overview
Type number Package NPN/NPN PNP/PNP Package
NXP JEITA complement complement configuration

PMBT3946YPN SOT363 SC-88 PMBT3904YS PMBT3906YS very small


1.2 Features
I General-purpose double transistor
I Board-space reduction

1.3 Applications
I General-purpose switching and amplification

1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
VCEO collector-emitter voltage open base - - 40 V
IC collector current - - 200 mA
hFE DC current gain VCE = 1 V; 100 180 300
IC = 10 mA
NXP Semiconductors PMBT3946YPN
40 V, 200 mA NPN/PNP general-purpose double transistor



2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
1 emitter TR1
6 5 4 6 5 4
2 base TR1
3 collector TR2
TR2
4 emitter TR2 TR1

5 base TR2 1 2 3
1 2 3
6 collector TR1
sym019




3. Ordering information
Table 4. Ordering information
Type number Package
Name Description Version
PMBT3946YPN SC-88 plastic surface-mounted package; 6 leads SOT363


4. Marking
Table 5. Marking codes
Type number Marking code[1]
PMBT3946YPN BB*

[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China




PMBT3946YPN_1