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KTA1266(PNP)
TO-92 Transistors
1. EMITTER TO-92
2. COLLECTOR
3. BASE
Features
Excellent hFE Linearity
Low noise
Complementary to KTC3198
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters)
IC Collector Current -Continuous -0.15 A
PC Collector Power Dissipation 625 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC =-100A, IE=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V
Collector cut-off current ICBO VCB=-50V, IE=0 -0.1 A
Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 A
hFE(1) VCE=-6V, IC=-2mA 70 400
DC current gain
hFE(2) VCE=-6V, IC=-150mA 25
Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA -0.3 V
Base-emitter saturation voltage VBE(sat) IC=-100mA, IB=-10mA -1.1 V
Transition frequency fT VCE=-10V, IC=-1mA 80 MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 7 pF
VCE=-6V, Ic=-0.1mA,
Noise figure NF 10 dB
f=1KHZ, Rg=10K
CLASSIFICATION OF hFE(1)
Rank O Y GR
Range 70-140 120-240 200-400
Marking
KTA1266(PNP)
TO-92 Transistors
Typical Characteristics