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CZT31C
SOT-223 Transistor(NPN)
1. BASE SOT-223
2. COLLECTOR
1
3. EMITTER
Features
Complementary to CZT32C
Power amplifier applications up to 3.0 amps.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 100 V
VCEO Collector-Emitter Voltage 100 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 3 A
PC Collector Power Dissipation 1 W
Tj Junction Temperature 150
Tstg Storage Temperature -65-150
ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=1m A,IE=0 100 V
Collector-emitter breakdown voltage V(BR)CEO IC=30mA,IB=0 100 V
Emitter-base breakdown voltage V(BR)EBO IE=3mA,IC=0 5 V
Collector cut-off current ICBO VCB=100V,IE=0 200 uA
Base cut-off current ICEO VCE=60V,IB=0 300 uA
Emitter cut-off current IEBO VEB=5V,IC=0 1 mA
hFE(1)* VCE=4V,IC=1A 25
DC current gain
hFE(2) * VCE=4V,IC=3A 10 100
Collector-emitter saturation voltage VCE(sat) * IC=3.0A,IB=375mA 1.2 V
Base-emitter voltage VBE * VCE=4V,IC=3A 1.8 V
Transition frequency fT VCE=10V,IC=500mA,f=1MHz 3 MHz
* Pulsed , 2%D.C.
CZT31C
SOT-223 Transistor(NPN)
Typical Characteristics