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D882
SOT-89 Transistor(NPN)
1. BASE

1 2. COLLECTOR SOT-89
2
4.6

3 3. EMITTER 1.6
4.4
B
1.8
1.4 1.4

Features
2.6 4.25
2.4 3.75

0.8
Power dissipation MIN
0.53
0.44 0.48 0.40
0.13 B 2x)
0.37 0.35
1.5
3.0
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 3 A
PC Collector Power Dissipation 0.5 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC = 100A, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 6 V
Collector cut-off current ICBO VCB= 40V, IE=0 1