Text preview for : cea6861.pdf part of CET cea6861 . Electronic Components Datasheets Active components Transistors CET cea6861.pdf
Back to : cea6861.pdf | Home
CEA6861
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-60V, -2.4A, RDS(ON) = 135m @VGS = -10V.
RDS(ON) = 180m @VGS = -4.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
D
Lead free product is acquired.
SOT-89 package.
G
D
S
D
G
SOT-89
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS