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SEMICONDUCTOR KTN2369U/AU
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH SPEED SWITCHING APPLICATION.
E
FEATURES M B M
DIM MILLIMETERS
High Frequency Characteristics. A _
2.00 + 0.20
D
2 B _
1.25 + 0.15
: fT=500MHz (Min.) (VCE=10V, f=100MHz, IC=10mA).
_
A
0.90 + 0.10
J
C
1 3
G
Excellent Switching Characteristics. D 0.3+0.10/-0.05
E _
2.10 + 0.20
G 0.65
H 0.15+0.1/-0.06
J 1.30
K 0.00-0.10
L 0.70
C
H _
L
M 0.42 + 0.10
N 0.10 MIN
N N
K
MAXIMUM RATING (Ta=25