stb16nb25.pdf part of ST stb16nb25 stb16nb25.pdf, . Electronic Components Datasheets Active components Transistors ST stb16nb25.pdf text manual preview

Text preview for : stb16nb25.pdf part of ST stb16nb25 . Electronic Components Datasheets Active components Transistors ST stb16nb25.pdf

Back to : stb16nb25.pdf | Home

STB16NB25
N - CHANNEL 250V - 0.220 - 16 A - TO-263
PowerMESHTM MOSFET
PRELIMINARY DATA
TYPE V DSS R DS(on) ID
STB16NB25 250 V < 0.250 16 A
s TYPICAL RDS(on) = 0.220
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED 3
1
s EXTREMELY HIGH dv/dt CAPABILITY
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE D2PAK
TO-263
DESCRIPTION (Suffix "T4")
Using the latest high voltage MESH
OVERLAYTM process, SGS-Thomson has
designed an advanced family of Power
MOSFETs with outstanding performance. The
new patent pending strip layout coupled with the
Company's proprietary edge termination
structure, gives the lowest RDS(on) per area, INTERNAL SCHEMATIC DIAGRAM
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching
characteristics.

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE R E

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V DS Drain-source Voltage (V GS = 0) 250 V
VDGR Drain- gate Voltage (R GS = 20 k) 250 V
V GS Gate-source Voltage