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3DK2222A(NPN)
TO-92 Bipolar Transistors
TO-92
1. EMITTER
4.45
2. BASE 5.21
3. COLLECTOR
1.25MAX
4.32
Features 2.92
MIN
5.33
MIN
6.35 MIN
Seating Plane
Epitaxial planar die construction
12.7
0.48
0.41
3.43
0.53
0.41
MIN
MAXIMUM RATINGS (TA=25 unless otherwise noted) 2.41
2.67
Symbol Parameter Value Units
3.18
4.19 2.03
VCBO Collector-Base Voltage 75 V 2.67
1.14
VCEO Collector-Emitter Voltage 40 V 1.40
2.03
2.67
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 600 mA Dimensions in inches and (millimeters)
PC Collector Power Dissipation 625 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 10uA , IE=0 75 V
*
Collector-emitter breakdown voltage V(BR)CEO IC= 10mA , IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE= 10uA, IC=0 6 V
Collector cut-off current ICBO VCB= 60 V , IE=0 10 nA
Collector cut-off current ICEX VCE= 60 V , VEB(OFF)=3V 10 nA
Emitter cut-off current IEBO VEB= 3 V , IC=0 10 nA
hFE(1) VCE=10 V, IC= 150mA 100 300
DC current gain hFE(2) VCE=10 V, IC= 0.1mA 40
hFE(3) VCE=10 V, IC= 500mA 42
VCE(sat)(1) IC= 500mA, IB= 50mA 0.6 V
Collector-emitter saturation voltage
VCE(sat)(2) IC= 150mA, IB= 15mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC= 500mA, IB= 50mA 1.2 V
Delay time td VCC=30V, IC=150mA 10 ns
Rise time tr VBE(off)=-0.5V,IB1=15mA 25
Storage time tS VCC=30V, IC=150mA 225
Fall time tf IB1=- IB2= 15mA 60
Transition frequency fT VCE=20 V, IC=20mA,f =100MHz 300 MHz
*
pulse test
CLASSIFICATION OF hFE(1)
Rank L H
Range 100-200 200-300
3DK2222A(NPN)
TO-92 Bipolar Transistors
Typical characteristics
3DK2222A(NPN)
TO-92 Bipolar Transistors