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SEMICONDUCTOR KTB688B
TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR


HIGH POWER AMPLIFIER APPLICATION.
A
N Q B
FEATURES O K

Recommended for 45 50W Audio Frequency Amplifier Output Stage.




F
DIM MILLIMETERS
Complementary to KTD718B. A _
15.60 + 0.20
B _
4.80 + 0.20




C
J
R
I
C _
19.90 + 0.20




H
D _
2.00 + 0.20
d _
1.00 + 0.20
E _
3.00 + 0.20




G
F _
3.80 + 0.20
D G _
3.50 + 0.20
E H _
13.90 + 0.20
MAXIMUM RATING (Ta=25 ) I _




L
12.76 + 0.20
d M _
J 23.40 + 0.20
CHARACTERISTIC SYMBOL RATING UNIT K 1.5+0.15-0.05
L _
16.50 + 0.30
Collector-Base Voltage VCBO -120 V P P T M _
1.40 + 0.20
N _
13.60 + 0.20
Collector-Emitter Voltage VCEO -120 V O _
9.60 + 0.20
P _
5.45 + 0.30
VEBO 1 2 3
Emitter-Base Voltage -5 V Q _
3.20 + 0.10
R _
18.70 + 0.20
Collector Current IC -10 A 1. BASE
T 0.60+0.15-0.05


Base Current IB -1 A 2. COLLECTOR (HEAT SINK)
3. EMITTER
Collector Power Dissipation (Tc=25 ) PC 80 W
Junction Temperature Tj 150 TO-3P(N)-E
Storage Temperature Range Tstg -55 150




ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-120V, IE=0 - - -10 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -10 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-50mA, IB=0 -120 - - V
DC Current Gain hFE (Note) VCE=-5V, IC=-1A 55 - 160
Collector-Emitter Saturation Voltage VCE(sat) IC=-5A, IB=-0.5A - - -2.5 V
Base-Emitter Voltage VBE VCE=-5V, IC=-5A - - -1.5 V
Transition Frequency fT VCE=-5V, IC=-1A - 10 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 280 - pF

Note : hFE Classification R:55 110, O:80 160




2005. 3. 14 Revision No : 1 1/2
KTB688B


IC - VCE Pc - Ta




COLLECTOR POWER DISSIPATION PC (W)
-10 100
COLLECTOR CURRENT IC (A)




COMMON EMITTER 1 Ta=Tc
Tc=25 C 1 INFINITE HEAT SINK
A



mA
0m




-8 0 80 2 300x300x2mm Al
-30 -200mA
0




HEAT SINK
-4




3 200x200x2mm Al
-6 60 HEAT SINK
-100mA 4 100x100x2mm Al
2 HEAT SINK
-4 40 3
-50mA 5 NO HEAT SINK
I B =-20mA 4
-2 20

0mA 5
0 0
0 -2 -4 -6 -8 -10 -12 -14 0 40 80 120 160 200 240


COLLECTOR-EMITTER VOLTAGE VCE (V) AMBIENT TEMPERATURE Ta ( C)



VCE(sat) - IC SAFE OPERATING AREA
COLLECTOR-EMITTER SATURATION




-5 -30
-3 COMMON EMITTER I C MAX(PULSED) t=1ms
VOLTAGE VCE(sat) (V)




I C/I B =10 t=10ms
COLLECTOR CURRENT IC (A)




I C MAX(CONTINUOUS) t=100ms
-1 -10 t=500ms
DC
-0.5 O
-5 Tc PE
-0.3 C =2 RA
0 5 TI
=10 -3 C ON
Tc
-0.1 Tc=25 C
Tc=-25 C
-0.05 -1
-0.03
-0.5 SINGLE NONREPETITIVE



VCEO MAX
PULSE Tc=25 C
-0.01 -0.3 CURVES MUST BE DERATED
-0.01 -0.03 -0.1 -0.3 -1 -3 -10 LINEARLY WITH INCREASE
IN TEMPERATURE
-0.1
COLLECTOR CURRENT IC (A)
-1 -3 -10 -30 -100 -300

COLLECTOR EMITTER VOLTAGE VCE (V)

hFE - IC

1k
COMMON EMITTER
DC CURRENT GAIN hFE




500 VCE =-5V
300
Tc=100 C

Tc=25 C
100 Tc=-25 C

50
30



10
-0.01 -0.03 -0.1 -0.3 -1 -3 -10


COLLECTOR CURRENT IC (A)




2005. 3. 14 Revision No : 1 2/2