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CZT5551
NPN Transistor
Elektronische Bauelemente
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-223

Description

The CZT5551 is designed for general
purpose applications requiring high
breakdown voltages.

REF. REF.
Min. Max. Min. Max.
A 6.70 7.30 B 13 T YP.
C
C 2.90 3.10 J 2.30 REF.
5 5 51 D 0.02 0.10 1 6.30 6.70
Date Code
E 0C 10 C 2 6.30 6.70
I 0.60 0.80 3 3.30 3.70
B C E H 0.25 0.35 4 3.30 3.70
o 5 1.40 1.80
MAXIMUM RATINGS* (Tamb =25 C , unless otherwise specified)

Symbol Parameter Value Units
VCBO Collector-Base Voltage 180 V
VCEO Collector-Emitter Voltage 160 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current-Continuous 600 mA
PD Total Power Dissipation 1.5 W
TJ,Tstg Junction and Storage Temperature -55~-150 O
C
o
ELECTRICAL CHARACTERISTICS Tamb=25 C unlessotherwise specified
Parameter Symbol MIN TYP MAX UNIT Test conditions

Collector-base breakdown voltage _ _ V
V(BR)CBO 180 Ic= 100u A,IE=0
_ _
Collector-emitter breakdown voltage V(BR)CEO 160 V IC= 1mA,IB=0
_ _
Emitter-base breakdown voltage V(BR)EBO 6 V IE= 10u A,IC=0
_ _
Collector cut-off current ICBO 50 nA VCB= 120V,IE=0
IEBO _ _ 50 nA VEB= 4V,IC=0
Emitter cut-off current
_ _ _
hFE 1 80 VCE= 5V, IC= 1mA
DC current gain hFE 2 80 160 400 _ VCE= 5V, IC= 10mA
_ _ _
hFE 3 50 VCE= 5V, IC= 50mA
VCE(sat) 1 _ _ I C= 10mA,IB= 1mA
0.15
Collector-emitter saturation voltage V
VCE(sat) 2 _ _ I C= 50mA,IB= 5mA
0.2
VBE(sat) 1 _ _
Base-emitter saturation voltage 1 IC= 10mA,IB= 1mA
_ _ V
VBE(sat) 2 1 IC= 50mA,IB= 5mA
VCE= 10V,IC= 10mA ,
Transition frequency fT 100 _ 300 MHz
f = 100MHz
Collector output capacitance Cob _ _ VCB= 10V, f=1MHz,IE=0
6 pF

CLASSIFICATION OF hFE
Rank A N C
Range 80-200 100-240 160-400

http://www.SeCoSGmbH.com Any changing of specification will not be informed individual

01-Jun-2004 Rev. B Page 1 of 2
CZT5551
NPN Transistor
Elektronische Bauelemente
Epitaxial Planar Transistor

Characteristics Curve

http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jun-2004 Rev. B Page2 of 2