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2SC1050 Silicon Epitaxial Planar Transistor
GENERAL DESCRIPTION
Silicon NPN high frequency, high power transistors in
a plastic envelope, primarily for use in audio and
general purpose
TO-3
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
VCESM Collector-emitter voltage peak value VBE = 0V - 300 V
VCEO Collector-emitter voltage (open base) - 250 V
IC Collector current (DC) - 1 A
ICM Collector current peak value - A
Ptot Total power dissipation Tmb 25 - 40 W
VCEsat Collector-emitter saturation voltage IC = 0.5A; IB = 0.1A - 1.2 V
VF Diode forward voltage IF = 0.5A 1.5 2.0 V
tf Fall time - s
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VCESM Collector-emitter voltage peak value VBE = 0V - 300 V
VCEO Collector-emitter voltage (open base) - 250 V
VEBO Emitter-base oltage (open colloctor) 5 V
IC Collector current (DC) - 1 A
IB Base current (DC) - 0.2 A
Ptot Total power dissipation Tmb 25 - 40 W
Tstg Storage temperature -55 150
Tj Junction temperature - 150
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
ICBO Collector-base cut-off current VCB=300V - 0.2 mA
IEBO Emitter-base cut-off current VEB=5V - 0.2 mA
V(BR)CEO Collector-emitter breakdown voltage IC=1mA 250
VCEsat Collector-emitter saturation voltages IC = 0.5A; IB =0.1A - 1.2 V
hFE DC current gain IC = 0.3A; VCE = 5V 30 200
fT Transition frequency at f = 5MHz IC = 0.1A; VCE = 12V 5 - MHz
Cc Collector capacitance at f = 1MHz VCB = 10V 50 - pF
ton On times us
ts Tum-off storage time us
tf Fall time us
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: [email protected]