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STD6NF10
STU6NF10
N-channel 100 V, 0.22 6 A, DPAK, IPAK
,
low gate charge STripFETTM Power MOSFET
Features
Type VDSS RDS(on) max ID
STD6NF10 100 V < 0.250 6A
STU6NF10 100 V < 0.250 6A 3 3
2 1
1
Exceptional dv/dt capability
100% avalanche tested IPAK DPAK
Application
Switching applications
Description
This Power MOSFET series realized with Figure 1. Internal schematic diagram
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC
converters for telecom and computer applications.
It is also intended for any applications with low
gate drive requirements.
Table 1. Device summary
Order codes Marking Package Packaging
STD6NF10T4 D6NF10 DPAK Tape and reel
STU6NF10 6NF10 IPAK Tube
November 2008 Rev 6 1/14
www.st.com 14
Contents STD6NF10, STU6NF10
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
STD6NF10, STU6NF10 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 100 V
VGS Gate- source voltage