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Philips Semiconductors Preliminary specification

Silicon Diffused Power Transistor BU2727A

GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection
circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to
1700V.

QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1700 V
VCEO Collector-emitter voltage (open base) - 825 V
IC Collector current (DC) - 12 A
ICM Collector current peak value - 30 A
Ptot Total power dissipation Tmb 25