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KSE340 NPN EPITAXIAL SILICON TRANSISTOR

HIGH COLLECTOR-EMITTER
SUSTAINING VOLTAGE TO-126
HIGH VOLTAGE GENERAL PURPOSE
APPLICATIONS
SUITABLE FOR TRANSFORMER
Complement to KSE350

ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector- Base Voltage VCBO 300 V
Collector-Emitter Voltage VCEO 300 V
Emitter- Base Voltage VEBO 5 V
Collector Current IC 500 mA
)
Collector Dissipation (T c=25 PC 20 W
Junction Temperature TJ 150
Storage Temperature T STG -65 ~ 150 1. Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (T C=25)
Characteristic Symbol Test Condition Min Max Unit
Collector Emitter Sustaining Voltage VCEO(sus) IC = 1mA, IB = 0 300 V
Collector Cutoff Current ICBO VCB = 300V, IE =0 100 uA
Emitter Cutoff Current IEBO VBE = 3V, IC = 0 100 uA
DC Current Gain hFE VCE = 10V, IC = 50mA 30 240
KSE340 NPN EPITAXIAL SILICON TRANSISTOR