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STP80NE03L-06
N - CHANNEL ENHANCEMENT MODE
" SINGLE FEATURE SIZETM " POWER MOSFET
PRELIMINARY DATA
T YPE V DSS R DS(o n) ID
ST P80NE03L-06 30 V < 0.006 80 A
s TYPICAL RDS(on) = 0.005
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE 100 oC
s APPLICATION ORIENTED
CHARACTERIZATION
3
2
DESCRIPTION 1
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size" TO-220
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc. )

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V DS Drain-source Voltage (V GS = 0) 30 V
V DGR Drain- gate Voltage (R GS = 20 k) 30 V
V GS Gate-source Voltage