Text preview for : ktc3875.pdf part of LGE ktc3875 . Electronic Components Datasheets Active components Transistors LGE ktc3875.pdf
Back to : ktc3875.pdf | Home
KTC3875
SOT-23 Transistor(NPN)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Features
High hFE: hFE=70-700
Low noise : NF=1dB(Typ),10dB(Max)
Complementary to KTA1504
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 150 mA
PC Collector Power Dissipation 150 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 50 V
Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 5 V
Collector cut-off current ICBO VCB= 60V, IE=0 0.1 A
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A
DC current gain hFE VCE= 6V, IC= 2mA 70 700
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 10mA 0.1 0.25 V
base-emitter saturation voltage VBE(sat) IC=100mA, IB= 10mA 1 V
Transition frequency fT VCE=10V, IC= 1mA 80 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHZ 2.0 3.5 pF
Noise figure NF VCE=6V,IC=0.1mA,Rg=10k,f=1KHZ 1.0 10 dB
CLASSIFICATION OF hFE
Rank O Y GR BL
Range 70-140 120-240 200-400 350-700
Marking ALO ALY ALG ALL
KTC3875
SOT-23 Transistor(NPN)
Typical Characteristics
KTC3875
SOT-23 Transistor(NPN)