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AM83135-030
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
.
. REFRACTORY/GOLD METALLIZATION
PRELIMINARY DATA
.
.
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE
.
.
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
. METAL/CERAMIC HERMETIC PACKAGE
POUT = 30 W MIN. WITH 5.5 dB GAIN .310 x .310 2LFL (S064)
hermetically sealed
ORDER CODE BRANDING
AM83135-030 AM83135-30
DESCRIPTION
The AM83135-030 device is a high power silicon
bipolar NPN transistor specifically designed for S-
PIN CONNECTION
Band radar pulsed output and driver applications.
This device is characterized at 100