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Philips Semiconductors Product specification

TrenchMOS transistor BUK9508-55A
Logic level FET BUK9608-55A

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effect power transistor in a
plastic envelope available in VDS Drain-source voltage 55 V
TO220AB and SOT404 . Using ID Drain current (DC) 75 A
'trench' technology which features Ptot Total power dissipation 200 W
very low on-state resistance. It is Tj Junction temperature 175