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SMG2310A
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente 5.0 A, 60 V, RDS(ON)=115 m

sRoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free SC-59
DESCRIPTIONS
The SMG2310A utilized advanced processing techniques to achieve the A
L
lowest possible on-resistance, extremely efficient and cost-effectiveness 3
3
device. The SMG2310A is universally used for all commercial-industrial Top View C B
applications. 1
1 2

K E 2

FEATURES
D
Simple Drive Requirement,
Small Package Outline F G H J
Super High Density Cell Design for Extremely Low RDS(ON)
REF. Millimeter REF. Millimeter
Min. Max. Min. Max.
A 2.70 3.10 G 0.10 REF.
B 2.25 3.00 H 0.40 REF.
MARKING CODE N-Channel Drain C 1.30 1.70 J 0.10 0.20

3
D 1.00 1.40 K 0.45 0.55
3 E 1.70 2.30 L 0.85 1.15
D F 0.35 0.50

2310A 1
Gate

2
1 2
G S
Source

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS