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BC807-16
BC807-25
BC807-40
1. BASE SOT-23 Transistor (PNP)
2. EMITTER
3. COLLECTOR

SOT-23
Features
Ldeally suited for automatic insertion
epitaxial planar die construction
complementary NPN type available(BC817)

MARKING: 807-16:5A; 807-25:5B; 807-40:5C

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -45 V Dimensions in inches and (millimeters)
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.5 A
PC Collector Power Dissipation 0.3 W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN MAX UNIT

Collector-base breakdown voltage VCBO IC= -10A, IE=0 -50 V

Collector-emitter breakdown voltage VCEO IC= -10mA, IB=0 -45 V

Emitter-base breakdown voltage VEBO IE= -1A, IC=0 -5 V

Collector cut-off current ICBO VCB= -45V, IE=0 -0.1 A

Collector cut-off current ICEO VCE= -40V, IB=0 -0.2 A

Emitter cut-off current IEBO VEB= -4 V, IC=0 -0.1 A
DC current gain 807-16 100 250
807-25 hFE(1) VCE= -1V, IC= -100mA 160 400
807-40 250 600

Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.7 V

Base-emitter saturation voltage VBE(sat) IC= -500mA, IB= -50mA -1.2 V

VCE= -5V, IC= -10mA
Transition frequency fT 100 MHz
f=100MHz
BC807-16
BC807-25
BC807-40
Typical Characteristics SOT-23 Transistor (PNP)