Text preview for : 2sa562.pdf part of LGE 2sa562 . Electronic Components Datasheets Active components Transistors LGE 2sa562.pdf
Back to : 2sa562.pdf | Home
2SA562(PNP)
TO-92 Bipolar Transistors
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
Features
Excellent hFE linearlity
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -35 V
VCEO Collector-Emitter Voltage -30 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -500 mA
PC Collector Power Dissipation 500 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -100A , IE=0 -35 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -30 V
Emitter-base breakdown voltage V(BR)EBO IE= -100A, IC=0 -5 V
Collector cut-off current ICBO VCB=-35V, IE=0 -0.1 A
Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 A
DC current gain hFE VCE=-1V, IC=-100mA 70 240
Collector-emitter saturation voltage VCE(sat) IC= -100mA, IB= -10mA -0.25 V
Base-emitter voltage VBE VCE=-1V,IC=-100mA -1 V
Transition frequency fT VCE= -6V, IC= -20mA 200 MHz
Collector output capacitance Cob VCB=-6V,IE=0,f=1MHz 13 pF
CLASSIFICATION OF hFE
Rank O Y
Range 70-140 120-240
2SA562(PNP)
TO-92 Bipolar Transistors
Typical Characteristics