Text preview for : hn4c51j_071101.pdf part of Toshiba hn4c51j 071101 . Electronic Components Datasheets Active components Transistors Toshiba hn4c51j_071101.pdf
Back to : hn4c51j_071101.pdf | Home
HN4C51J
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN4C51J
Audio Frequency General Purpose Amplifier Applications Unit: mm
High voltage : VCEO = 120V
High hFE : hFE = 200~700
Excellent hFE linearity
: hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)
Low noise : NF = 1dB(typ.)
Absolute Maximum Ratings (Ta = 25